mpsa13 / mmbta13 / pzta13 npn darlington transistor this device is designed for applications requiring extremely high current gain at collector currents to 1.0 a. sourced from process 05. see mpsa14 for characteristics. mmbta13 mpsa13 pzta13 absolute maximum ratings* ta = 25c unless otherwise noted symbol parameter value units v ces collector-emitter voltage 30 v v cbo collector-base voltage 30 v v ebo emitter-base voltage 10 v i c collector current - continuous 1.2 a t j , t stg operating and storage junction temperature range -55 to +150 c * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol characteristic max units mpsa13 *mmbta13 **pzta13 p d total device dissipation derate above 25 c 625 5.0 350 2.8 1,000 8.0 mw mw/ c r q jc thermal resistance, junction to case 83.3 c/w r q ja thermal resistance, junction to ambient 200 357 125 c/w thermal characteristics ta = 25c unless otherwise noted c b e to-92 c b e sot-23 mark: 1m b c c sot-223 e * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ** device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . ? 1997 fairchild semiconductor corporation
mpsa13 / mmbta13 / pzta13 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test c onditions min max units v (br)ces collector-emitter breakdown voltage i c = 100 m a, i b = 0 30 v i cbo collector-cutoff current v cb = 30 v, i e = 0 100 na i ebo emitter-cutoff current v eb = 10 v, i c = 0 100 na on characteristics* h fe dc current gain i c = 10 ma, v ce = 5.0 v i c = 100 ma, v ce = 5.0 v 5,000 10,000 v ce( sat ) collector-emitter saturation voltage i c = 100 ma, i b = 0.1 ma 1.5 v v be( on ) base-emitter on voltage i c = 100 ma, v ce = 5.0 v 2.0 v small signal characteristics * pulse test: pulse width 300 m s, duty cycle 2.0% f t current gain - bandwidth product i c = 10 ma, v ce = 10 v, f = 100 mhz 125 mhz npn darlington transistor (continued)
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product folder - fairchild p/n mpsa13 - npn darlington transistor fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company mpsa13 npn darlington transistor related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | product status/pricing/packaging general description this device is designed for applications requiring extremely high current gain at collector currents to 1.0 a. sourced from process 05. see mpsa14 for characteristics. back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status pricing* package type leads package marking packing method MPSA13RA full production $0.078 to-92 3 $y&3 mps a13 tape reel mpsa13 full production $0.078 to-92 3 $y&3 mps a13 bulk * 1,000 piece budgetary pricing back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///c|/shj/mpsa13.html [jul-26-2002 4:17:30 pm]
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